Radiation hardness and charge collection in a SOI based diode array designed for medical microdosimetry
نویسندگان
چکیده
The radiation hardness of diode array devices based on silicon on insulator technology and bulk technology was investigated. The devices were exposed to 24 GeV/c protons (at CERN) up to a fluence of 4.1 10 p/cm. Charge collection following irradiation indicated a significant reduction in minority carrier lifetime. The damage constant was calculated using alpha particle spectroscopy methods. These experiments demonstrate that such a device has sufficient radiation hardness to be used in medical radiation oncology applications as a microdosimeter.
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